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CMPDM8002A TR

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CMPDM8002A TR Image

The CMPDM8002A TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.28 A, Drain Source Resistance 2500 to 5000 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for CMPDM8002A TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMPDM8002A TR
  • Manufacturer
    Central Semiconductor
  • Description
    50 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Dimensions
    3.05 x 2.49 x 1.09 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    2500 to 5000 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.72 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
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