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CMUDM8005 TR

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CMUDM8005 TR Image

The CMUDM8005 TR from Central Semiconductor is a MOSFET with Continous Drain Current 0.65 A, Drain Source Resistance 250 to 800 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for CMUDM8005 TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMUDM8005 TR
  • Manufacturer
    Central Semiconductor
  • Description
    20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Dimensions
    1.7 x 1.7 x 0.78 mm
  • Number of Channels
    Single
  • Continous Drain Current
    0.65 A
  • Drain Source Resistance
    250 to 800 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    1.2 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -65 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
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