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CP343X-CXDM1002N

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The CP343X-CXDM1002N from Central Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 300 to 350 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Die. More details for CP343X-CXDM1002N can be seen below.

Product Specifications

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Product Details

  • Part Number
    CP343X-CXDM1002N
  • Manufacturer
    Central Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    300 to 350 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    6 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Die

Technical Documents
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