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CP406-CWDM3011N

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The CP406-CWDM3011N from Central Semiconductor is a MOSFET with Continous Drain Current 9.93 A, Drain Source Resistance 5.66 to 18 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Die. More details for CP406-CWDM3011N can be seen below.

Product Specifications

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Product Details

  • Part Number
    CP406-CWDM3011N
  • Manufacturer
    Central Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.93 A
  • Drain Source Resistance
    5.66 to 18 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Power Dissipation
    1.92 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Die

Technical Documents
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