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CXDM4060P TR

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CXDM4060P TR Image

The CXDM4060P TR from Central Semiconductor is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 48 to 95 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for CXDM4060P TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    CXDM4060P TR
  • Manufacturer
    Central Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    4.7 x 4.5 x 1.7 mm
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    48 to 95 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    16 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Load/Power switches, Power supply converter circuits, Battery powered portable equipment

Technical Documents
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