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CZDM8502N BK

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CZDM8502N BK Image

The CZDM8502N BK from Central Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 6300 milliohm, Drain Source Breakdown Voltage 850 V, Gate Source Voltage 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for CZDM8502N BK can be seen below.

Product Specifications

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Product Details

  • Part Number
    CZDM8502N BK
  • Manufacturer
    Central Semiconductor
  • Description
    850 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    6.7 x 7.3 x 1.8 mm
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    6300 milliohm
  • Drain Source Breakdown Voltage
    850 V
  • Gate Source Voltage
    30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.7 nC
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    LED lighting, Switch-mode power supplies, Power factor corrections

Technical Documents
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