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CMSBN6601-HF

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CMSBN6601-HF Image

The CMSBN6601-HF from Comchip Technology is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 8 to 17 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Charge 25.4 nC. Tags: Surface Mount. More details for CMSBN6601-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMSBN6601-HF
  • Manufacturer
    Comchip Technology
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    8 to 17 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    25.4 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    CSPB2718-6

Technical Documents
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