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CMSP2011A6-HF

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The CMSP2011A6-HF from Comchip Technology is a MOSFET with Continous Drain Current -11 A, Drain Source Resistance 14 to 40 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for CMSP2011A6-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    CMSP2011A6-HF
  • Manufacturer
    Comchip Technology
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    14 to 40 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    35 nC
  • Power Dissipation
    0.75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFNWB2x2-6L-J

Technical Documents
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