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MTA080P01SN3-0-T1-G

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The MTA080P01SN3-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current -2.1 to -2.7 A, Drain Source Resistance 90 to 290 milli-ohm, Drain Source Breakdown Voltage -14 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.4 to -1.5 V. Tags: Surface Mount. More details for MTA080P01SN3-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTA080P01SN3-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    -14 V, -2.1 to -2.7 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.1 to -2.7 A
  • Drain Source Resistance
    90 to 290 milli-ohm
  • Drain Source Breakdown Voltage
    -14 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.4 to -1.5 V
  • Gate Charge
    5.3 nC
  • Switching Speed
    2 to 22 ns
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Note
    Input Capacitance :- 290 pF

Technical Documents
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