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MTA100N10KRI3-0-UA-G

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The MTA100N10KRI3-0-UA-G from Cystech Electronics is a MOSFET with Continous Drain Current 2.4 to 8.6 A, Drain Source Resistance 100 to 300 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2 V. Tags: Through Hole. More details for MTA100N10KRI3-0-UA-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTA100N10KRI3-0-UA-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 2.4 to 8.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 to 8.6 A
  • Drain Source Resistance
    100 to 300 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 2 V
  • Gate Charge
    8.5 nC
  • Switching Speed
    4.4 to 18 ns
  • Power Dissipation
    23 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Note
    Input Capacitance :- 410 pF

Technical Documents
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