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MTA1K8N15KL3-0-T3-G

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The MTA1K8N15KL3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current 0.6 to 1.6 A, Drain Source Resistance 1.2 to 2.4 Ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for MTA1K8N15KL3-0-T3-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTA1K8N15KL3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    150 V, 0.6 to 1.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.6 to 1.6 A
  • Drain Source Resistance
    1.2 to 2.4 Ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    2.9 nC
  • Switching Speed
    16 to 104 ns
  • Power Dissipation
    10 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223

Technical Documents
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