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MTA7D0N01V8-0-T6-G

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The MTA7D0N01V8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current 8 to 28 A, Drain Source Resistance 7.5 to 13.0 milli-ohm, Drain Source Breakdown Voltage 16 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.0 V. Tags: Surface Mount. More details for MTA7D0N01V8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTA7D0N01V8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    16 V, 8 to 28 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 to 28 A
  • Drain Source Resistance
    7.5 to 13.0 milli-ohm
  • Drain Source Breakdown Voltage
    16 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1.0 V
  • Gate Charge
    14 nC
  • Switching Speed
    10 to 47 ns
  • Power Dissipation
    15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3×3
  • Note
    Input Capacitance :- 920 pF

Technical Documents
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