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MTB060P06KN3-0-T1-G

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The MTB060P06KN3-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current -2.5 to -2 A, Drain Source Resistance 65 to 135 milli-ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for MTB060P06KN3-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB060P06KN3-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    -60 V, -2.5 to -2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 to -2 A
  • Drain Source Resistance
    65 to 135 milli-ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    6.2 to 12 nC
  • Switching Speed
    6.4 to 29 ns
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Note
    Input Capacitance :- 535 pF

Technical Documents
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