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MTB080N20H8-0-T6-G

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The MTB080N20H8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current 2.7 to 21 A, Drain Source Resistance 88 to 140 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for MTB080N20H8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB080N20H8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    200 V, 2.7 to 21 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.7 to 21 A
  • Drain Source Resistance
    88 to 140 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    35 nC
  • Switching Speed
    14 to 154 ns
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 1448 pF

Technical Documents
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