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MTB090A06N8J-0-T1-G

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The MTB090A06N8J-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current 2.3 to 4.2 A, Drain Source Resistance 66 to 108 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for MTB090A06N8J-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB090A06N8J-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    60 V, 2.3 to 4.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.3 to 4.2 A
  • Drain Source Resistance
    66 to 108 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    9.4 nC
  • Switching Speed
    3.8 to 22.2 ns
  • Power Dissipation
    3.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    2928-8J
  • Note
    Input Capacitance :- 356 pF

Technical Documents
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