1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTB100N10BKRJ3-0-T3-G

MTB100N10BKRJ3-0-T3-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTB100N10BKRJ3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current 5.1 to 8 A, Drain Source Resistance 112 to 260 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for MTB100N10BKRJ3-0-T3-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTB100N10BKRJ3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 5.1 to 8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.1 to 8 A
  • Drain Source Resistance
    112 to 260 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    5.3 nC
  • Switching Speed
    1.6 to 15 ns
  • Power Dissipation
    21 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252(DPAK)
  • Note
    Input Capacitance :- 242 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products