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MTB100P08L3-0-T3-G

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The MTB100P08L3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current -2.2 to -7.5 A, Drain Source Resistance 100 to 180 milli-ohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.5 V. Tags: Surface Mount. More details for MTB100P08L3-0-T3-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB100P08L3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    -80 V, -2.2 to -7.5 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.2 to -7.5 A
  • Drain Source Resistance
    100 to 180 milli-ohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.5 V
  • Gate Charge
    15 nC
  • Switching Speed
    7.6 to 34 ns
  • Power Dissipation
    14.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Note
    Input Capacitance :- 705 pF

Technical Documents
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