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MTB160N25FP-0-UB-S

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The MTB160N25FP-0-UB-S from Cystech Electronics is a MOSFET with Continous Drain Current 10.3 to 14.5 A, Drain Source Resistance 137 to 195 milli-ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for MTB160N25FP-0-UB-S can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB160N25FP-0-UB-S
  • Manufacturer
    Cystech Electronics
  • Description
    250 V, 10.3 to 14.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.3 to 14.5 A
  • Drain Source Resistance
    137 to 195 milli-ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    44.3 nC
  • Switching Speed
    16 to 141 ns
  • Power Dissipation
    68 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FP
  • Note
    Input Capacitance :- 2170 pF

Technical Documents
View details on the manufacturer's website
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