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MTB190P10N6-0-T1-G

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The MTB190P10N6-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 170 to 270 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for MTB190P10N6-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB190P10N6-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    -100 V, -2 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 A
  • Drain Source Resistance
    170 to 270 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    15 nC
  • Switching Speed
    8 to 35 ns
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Note
    Input Capacitance :- 710 pF

Technical Documents
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