1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTB250N10KRM3-0-T2-G

MTB250N10KRM3-0-T2-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTB250N10KRM3-0-T2-G from Cystech Electronics is a MOSFET with Continous Drain Current 1.4 to 4 A, Drain Source Resistance 230 to 500 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for MTB250N10KRM3-0-T2-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTB250N10KRM3-0-T2-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 1.4 to 4 A , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 to 4 A
  • Drain Source Resistance
    230 to 500 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.4 to 3 nC
  • Switching Speed
    3.2 to 9 ns
  • Power Dissipation
    10 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Note
    Input Capacitance :- 105 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products