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MTB3D0P03H8-0-T6-G

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The MTB3D0P03H8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -16 to -102 A, Drain Source Resistance 2.6 to 6.5 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to -2.5 V. Tags: Surface Mount. More details for MTB3D0P03H8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTB3D0P03H8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -30 V, -16 to -102 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -16 to -102 A
  • Drain Source Resistance
    2.6 to 6.5 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to -2.5 V
  • Gate Charge
    225 nC
  • Switching Speed
    32 to 175 ns
  • Power Dissipation
    74 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 10500 pF

Technical Documents
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