The MTBC7N10K3-0-BM-G from Cystech Electronics is a MOSFET with Continous Drain Current 1 to 1.3 A, Drain Source Resistance 390 to 560 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for MTBC7N10K3-0-BM-G can be seen below.