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MTD012P04J3-0-T3-G

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The MTD012P04J3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current -8 to -39 A, Drain Source Resistance 12 to 25 milli-ohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.5 to -3 V. Tags: Through Hole. More details for MTD012P04J3-0-T3-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTD012P04J3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    -40 V, -8 to -39 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -8 to -39 A
  • Drain Source Resistance
    12 to 25 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.5 to -3 V
  • Gate Charge
    50 nC
  • Switching Speed
    15.5 to 96 ns
  • Power Dissipation
    42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-252
  • Note
    Input Capacitance :- 2500 pF

Technical Documents
View details on the manufacturer's website
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