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MTDN8211KX6-0-T1-G

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The MTDN8211KX6-0-T1-G from Cystech Electronics is a MOSFET with Continous Drain Current 6 to 7.6 A, Drain Source Resistance 10 to 21 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1.2 V. Tags: Surface Mount. More details for MTDN8211KX6-0-T1-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTDN8211KX6-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    20 V, 6 to 7.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 to 7.6 A
  • Drain Source Resistance
    10 to 21 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1.2 V
  • Gate Charge
    9.5 nC
  • Switching Speed
    50 to 900 ns
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TDFN2×3-6L
  • Note
    Input Capacitance :- 700 pF

Technical Documents
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