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MTE013P03V8-0-T6-G

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The MTE013P03V8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -6.6 to -29 A, Drain Source Resistance 11 to 15 milli-ohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.5 to -3.5 V. Tags: Surface Mount. More details for MTE013P03V8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE013P03V8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -30 V, -6.6 to -29 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.6 to -29 A
  • Drain Source Resistance
    11 to 15 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.5 to -3.5 V
  • Gate Charge
    30 nC
  • Switching Speed
    11 to 48 ns
  • Power Dissipation
    22 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3×3
  • Note
    Input Capacitance :- 1520 pF

Technical Documents
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