The MTE040P10RV8-0-T6-G from Cystech Electronics is a P-Channel Enhancement Mode Power MOSFET that is ideal for industrial and commercial applications. It has a drain-source breakdown voltage of over -100 V, a gate threshold voltage of -4 V, and a drain-source on-resistance of 62 milli-ohms. This MOSFET has a continuous drain current of up to -19 A and a power dissipation of less than 43 W. It features low on-resistance, low gate charge and fast switching characteristics. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 3.45 x 3.45 mm.
