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MTE050P10J3-0-T3-G

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The MTE050P10J3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current -3.8 to -25 A, Drain Source Resistance 45.0 to 59.0 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -4 V. Tags: Through Hole. More details for MTE050P10J3-0-T3-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE050P10J3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    -100 V, -3.8 to -25 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.8 to -25 A
  • Drain Source Resistance
    45.0 to 59.0 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -4 V
  • Gate Charge
    32 nC
  • Switching Speed
    17 to 47 ns
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-252
  • Note
    Input Capacitance :- 1961 pF

Technical Documents
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