MTE150P20BH8-0-T6-G

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The MTE150P20BH8-0-T6-G from Cystech Electronics is a MOSFET with Continous Drain Current -1.7 to -13 A, Drain Source Resistance 135 to 180 milli-ohm, Drain Source Breakdown Voltage -200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -2 to -4 V. Tags: Surface Mount. More details for MTE150P20BH8-0-T6-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE150P20BH8-0-T6-G
  • Manufacturer
    Cystech Electronics
  • Description
    -200 V, -1.7 to -13 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.7 to -13 A
  • Drain Source Resistance
    135 to 180 milli-ohm
  • Drain Source Breakdown Voltage
    -200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -2 to -4 V
  • Gate Charge
    45 nC
  • Switching Speed
    23 to 67 ns
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5×6
  • Note
    Input Capacitance :- 2270 pF

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