1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Cystech Electronics
  6. MTE1D3N04BE3-0-UB-G

MTE1D3N04BE3-0-UB-G

Download Datasheet Request Quote

Note : Your request will be directed to Cystech Electronics.

The MTE1D3N04BE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 20 to 240 A, Drain Source Resistance 1.4 to 2.0 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE1D3N04BE3-0-UB-G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MTE1D3N04BE3-0-UB-G
  • Manufacturer
    Cystech Electronics
  • Description
    40 V, 20 to 240 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 to 240 A
  • Drain Source Resistance
    1.4 to 2.0 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    175 nC
  • Switching Speed
    22 to 115 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 8750 pF

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products