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MTE1D3N04E3-0-UB-S

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The MTE1D3N04E3-0-UB-S from Cystech Electronics is a MOSFET with Continous Drain Current 140 to 223 A, Drain Source Resistance 1.6 to 2.1 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE1D3N04E3-0-UB-S can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE1D3N04E3-0-UB-S
  • Manufacturer
    Cystech Electronics
  • Description
    40 V, 140 to 223 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    140 to 223 A
  • Drain Source Resistance
    1.6 to 2.1 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    174.1 nC
  • Switching Speed
    25.2 to 118.2 ns
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 8756 pF

Technical Documents
View details on the manufacturer's website
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