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MTE3D0N10RE3-0-UB-G

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The MTE3D0N10RE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 22 to 164 A, Drain Source Resistance 3.2 to 4 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE3D0N10RE3-0-UB-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE3D0N10RE3-0-UB-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 22 to 164 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22 to 164 A
  • Drain Source Resistance
    3.2 to 4 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    90 nC
  • Switching Speed
    20 to 70 ns
  • Power Dissipation
    192 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 6200 pF

Technical Documents
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