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MTE3D6N10RE3-0-UB-G

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The MTE3D6N10RE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 16 to 108 A, Drain Source Resistance 4 to 5.2 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE3D6N10RE3-0-UB-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE3D6N10RE3-0-UB-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 16 to 108 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 to 108 A
  • Drain Source Resistance
    4 to 5.2 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 nC
  • Switching Speed
    42 to 60 ns
  • Power Dissipation
    139 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 5250 pF

Technical Documents
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