The MTE4D5N04J3-0-T3-G from Cystech Electronics is an N-Channel Enhancement Mode Power MOSFET ideal for fast-switching applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of more than 2 V, and a drain-source on-resistance of 4.2 milli-ohms. This power MOSFET has a continuous drain current of up to 16 A and a pulsed drain current of less than 172 A. It has a power dissipation of up to 125 W. This power MOSFET has low gate charge and contributes to faster response, making it suitable for high-frequency switching applications. It is available in a surface-mount package that measures 9.712 x 6.5 mm.