The MTE5D0N10BRE3-0-UB-G from Cystech Electronics is a MOSFET with Continous Drain Current 14 to 84 A, Drain Source Resistance 5.9 to 8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE5D0N10BRE3-0-UB-G can be seen below.