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MTE8D5N10RJ3-0-T3-G

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The MTE8D5N10RJ3-0-T3-G from Cystech Electronics is a MOSFET with Continous Drain Current 10 to 56 A, Drain Source Resistance 9.0 to 12.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for MTE8D5N10RJ3-0-T3-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTE8D5N10RJ3-0-T3-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 10 to 56 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 56 A
  • Drain Source Resistance
    9.0 to 12.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    32 nC
  • Switching Speed
    9.3 to 23 ns
  • Power Dissipation
    73 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-252
  • Note
    Input Capacitance :- 2200 pF

Technical Documents
View details on the manufacturer's website
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