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MTN3607E3-0-UB-S

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The MTN3607E3-0-UB-S from Cystech Electronics is a MOSFET with Continous Drain Current 80 to 122 A, Drain Source Resistance 6 to 8 milli-ohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for MTN3607E3-0-UB-S can be seen below.

Product Specifications

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Product Details

  • Part Number
    MTN3607E3-0-UB-S
  • Manufacturer
    Cystech Electronics
  • Description
    75 V, 80 to 122 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 to 122 A
  • Drain Source Resistance
    6 to 8 milli-ohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    78.8 nC
  • Switching Speed
    9.2 to 67.8 ns
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Mode Power Supply, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
  • Note
    Input Capacitance :- 3944 pF

Technical Documents
View details on the manufacturer's website
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