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D3S099N65B-U

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The D3S099N65B-U from D3 Semiconductor is a MOSFET with Continous Drain Current 21.3 to 33.6 A, Drain Source Resistance 94 to 190 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.3 to 4.5 V. Tags: Through Hole. More details for D3S099N65B-U can be seen below.

Product Specifications

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Product Details

  • Part Number
    D3S099N65B-U
  • Manufacturer
    D3 Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21.3 to 33.6 A
  • Drain Source Resistance
    94 to 190 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.3 to 4.5 V
  • Gate Charge
    56 nC
  • Power Dissipation
    272 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power Factor Correction, Server Power Supplies, Telecom Power Supplies, Inverters, Motor Control

Technical Documents
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