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2N6659-PBF

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The 2N6659-PBF from Digitron Semiconductors is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 2 to 3.6 Ohm, Drain Source Breakdown Voltage 35 to 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2 V. Tags: Through Hole. More details for 2N6659-PBF can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6659-PBF
  • Manufacturer
    Digitron Semiconductors
  • Description
    35 to 75 V, 1.4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    2 to 3.6 Ohm
  • Drain Source Breakdown Voltage
    35 to 75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2 V
  • Switching Speed
    8 to 10 ns
  • Power Dissipation
    6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Used in control and sensing applications
  • Note
    Input Capacitance :- 50 pF

Technical Documents
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