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2N6661-HR

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The 2N6661-HR from Digitron Semiconductors is a MOSFET with Continous Drain Current 0.86 A, Drain Source Resistance 3.6 to 7.5 Ohm, Drain Source Breakdown Voltage 90 to 125 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.3 to 2.5 V. Tags: Through Hole. More details for 2N6661-HR can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6661-HR
  • Manufacturer
    Digitron Semiconductors
  • Description
    90 to 125 V, 0.86 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.86 A
  • Drain Source Resistance
    3.6 to 7.5 Ohm
  • Drain Source Breakdown Voltage
    90 to 125 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.3 to 2.5 V
  • Switching Speed
    6 to 10 ns
  • Power Dissipation
    6.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Used in control and sensing applications
  • Note
    Input Capacitance :- 50 pF

Technical Documents
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