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2N6796-PBF

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The 2N6796-PBF from Digitron Semiconductors is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 0.195 Ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 5 V. Tags: Through Hole. More details for 2N6796-PBF can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6796-PBF
  • Manufacturer
    Digitron Semiconductors
  • Description
    100 V, 8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    0.195 Ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 5 V
  • Gate Charge
    28.51 nC
  • Switching Speed
    30 to 300 ns
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-205
  • Applications
    Used in control and sensing applications

Technical Documents
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