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BSP75GQ

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The BSP75GQ from Diodes Incorporated is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 385 to 675 Milliohm, Drain Source Breakdown Voltage 60 V, Power Dissipation 2.5 W, Temperature operating range -40 to 150 Degree C. Tags: Surface Mount. More details for BSP75GQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSP75GQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 1.4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    385 to 675 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223

Technical Documents
View details on the manufacturer's website
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