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DMC1018UPDWQ

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The DMC1018UPDWQ from Diodes Incorporated is a MOSFET with Continous Drain Current -20.9 to 31.3 A, Drain Source Resistance 9.6 to 53 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage 8 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for DMC1018UPDWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMC1018UPDWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    8 to 12 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -20.9 to 31.3 A
  • Drain Source Resistance
    9.6 to 53 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    8.6 to 30.4 nC
  • Power Dissipation
    2.6 to 25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Motor Control, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
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