1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMG1012UWQ

DMG1012UWQ

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMG1012UWQ Image

The DMG1012UWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 0.66 A, Drain Source Resistance 13 to 75 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for DMG1012UWQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMG1012UWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, 0.66 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.66 A
  • Drain Source Resistance
    13 to 75 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    1 nC
  • Power Dissipation
    0.29 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, DC-DC Converters, Analog Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products