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DMG1013UW

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The DMG1013UW from Diodes Incorporated is a MOSFET with Continous Drain Current -0.82 A, Drain Source Resistance 500 to 1500 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1 to -0.5 V. Tags: Surface Mount. More details for DMG1013UW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG1013UW
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.82 A
  • Drain Source Resistance
    500 to 1500 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.5 V
  • Gate Charge
    0.622 nC
  • Power Dissipation
    0.31 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323

Technical Documents
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