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DMG3415UFY4Q

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The DMG3415UFY4Q from Diodes Incorporated is a MOSFET with Continous Drain Current -2.5 A, Drain Source Resistance 31 to 65 milliohm, Drain Source Breakdown Voltage -16 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for DMG3415UFY4Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG3415UFY4Q
  • Manufacturer
    Diodes Incorporated
  • Description
    16 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 A
  • Drain Source Resistance
    31 to 65 milliohm
  • Drain Source Breakdown Voltage
    -16 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    10 nC
  • Power Dissipation
    1.35 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN2015-3
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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