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DMG4800LFG

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The DMG4800LFG from Diodes Incorporated is a MOSFET with Continous Drain Current 7.44 A, Drain Source Resistance 11 to 24 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMG4800LFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG4800LFG
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.44 A
  • Drain Source Resistance
    11 to 24 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    9.47 nC
  • Power Dissipation
    0.94 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN3030-8

Technical Documents
View details on the manufacturer's website
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