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DMG5802LFX

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DMG5802LFX Image

The DMG5802LFX from Diodes Incorporated is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 11 to 20 Milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for DMG5802LFX can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG5802LFX
  • Manufacturer
    Diodes Incorporated
  • Description
    24 V, 6.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    11 to 20 Milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    31.3 nC
  • Power Dissipation
    0.98 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    W-DFN5020-6
  • Applications
    Power Management Functions, DC-DC Converters

Technical Documents
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