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DMG6301UDW

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The DMG6301UDW from Diodes Incorporated is a MOSFET with Continous Drain Current 0.24 A, Drain Source Resistance 3100 to 5000 Milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.65 to 1.5 V. Tags: Surface Mount. More details for DMG6301UDW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG6301UDW
  • Manufacturer
    Diodes Incorporated
  • Description
    25 V, 0.24 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.24 A
  • Drain Source Resistance
    3100 to 5000 Milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.65 to 1.5 V
  • Gate Charge
    0.36 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    Power Management Functions, DC-DC Converters

Technical Documents
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