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DMG6302UDW

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The DMG6302UDW from Diodes Incorporated is a MOSFET with Continous Drain Current -0.15 A, Drain Source Resistance 2000 to 13000 milliohm, Drain Source Breakdown Voltage -25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.65 V. Tags: Surface Mount. More details for DMG6302UDW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG6302UDW
  • Manufacturer
    Diodes Incorporated
  • Description
    25 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.15 A
  • Drain Source Resistance
    2000 to 13000 milliohm
  • Drain Source Breakdown Voltage
    -25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.65 V
  • Gate Charge
    0.34 nC
  • Power Dissipation
    0.38 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, Analog Switch

Technical Documents
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