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DMG6968UTS

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The DMG6968UTS from Diodes Incorporated is a MOSFET with Continous Drain Current 5.2 A, Drain Source Resistance 18 to 34 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 0.95 V. Tags: Surface Mount. More details for DMG6968UTS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG6968UTS
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, 5.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    18 to 34 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 0.95 V
  • Gate Charge
    8.8 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8

Technical Documents
View details on the manufacturer's website
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